Anatoli Chkrebtii
PhD
Professor
PhysicsFaculty of Science
Dr. Chkrebtii is internationally renowned for his innovative research that correlate at microscopic level dynamics, electronics, and optics of modern materials and their application.
Languages
English, Russian, Ukrainian, Italian
anatoli.chkrebtii@ontariotechu.ca
905.721.8668 ext. 2558
Areas of expertise
- PhD - Semiconductors Institute of Semiconductor Physics, Ukraine 1985
- MSc - Theoretical Physics Kiev State University, Ukraine 1974
Poster Presentation: Betavoltaics: Analysis of the Attainable Efficiency for Direct-Bandgap Semiconductors
International Congress Center, Munich, Germany June 24, 201632nd European Photovoltaic Solar Energy Conference and Exhibition
Poster Presentation: Correlation of Temperature Dependent Vibrations, Structure and Optical Response of Si(100) Surface from First Principles
Donostia-San Sebastian, Spain June 22, 201515th International Conference on Vibrations at Surfaces
Poster Presentation: Characterization of Hydrogen in c‐Si and a‐Si:H from ab‐Initio Molecular Dynamics: Structure, Optics and Vibrations
Amsterdam, The Netherlands September 22, 2014The 29th European Photovoltaic Solar Energy Conference
Poster Presentation: Modelling Photoconversion Efficiency of Tandem Solar Cells: Interface vs. Bulk Contributions
Gyeongju, Korea June 20, 2013The 14th International Conference on the Formation of Semiconductor Interface
Poster Presentation: Anomalous Stokes Shift in CdTe Nanocrystals: Theory vs . Experiment
Rhodes, Greece August 26, 2012XI International Conference on Nanostructured Materials
Nonlinear Optical Responses in Hydrogenated Graphene Structures
Published in Physica Status Solidi (b) December 4, 2015Reinaldo Zapata‐Peña, Sean M. Anderson, Bernardo S. Mendoza & Anatoli I. Shkrebtii
This research presents a theoretical study of the optical spin injection, optical current injection, and second harmonic generation of two 50% hydrogenated graphene structures: optical spin injection, under the incidence of circularly polarized light onto nonmagnetic semiconductors, creates spin-polarized electrons in the conduction bands. Optical current injection and second-harmonic generation are nonlinear second-order effects that are allowed in materials without inversion symmetry.
View more - Nonlinear Optical Responses in Hydrogenated Graphene Structures
Analysis of the Attainable Efficiency of a Direct-Bandgap Betavoltaic Element
Published in Journal of Physics D: Applied Physics Volume: 48, Number: 45 October 6, 2015A. V. Sachenko, A. I. Shkrebtii, R. M. Korkishko1, V. P. Kostylyov, M. R. Kulish1, I. O. Sokolovskyi1 and M. Evstigneev3
Conversion of energy of beta-particles into electric energy in a p-n junction based on direct-bandgap semiconductors, such as GaAs, is analyzed considering realistic semiconductor system parameters. An expression for the collection coefficient, Q, of the electron–hole pairs generated by beta-electrons is derived taking into account the existence of the dead layer.
View more - Analysis of the Attainable Efficiency of a Direct-Bandgap Betavoltaic Element
Efficiency Analysis of Betavoltaic Elements
Published in Solid-State Electronics Volume: 111, Pages: 147-152 September 1, 2015A. V. Sachenko, A. I. Shkrebtii, R. M. Korkishko, V. P. Kostylyov, M. R. Kulish & I. O. Sokolovskyi
The conversion of energy of electrons produced by a radioactive β -source into electricity in a Si and SiC p–np–n junctions is modeled. The features of the generation function that describes the electron–hole pair production by an electron flux and the emergence of a “dead layer” are discussed.
Characterization of Hydrogen in c-Si and a-Si:H from ab-Initio Molecular Dynamics: Structure, Optics and Vibrations
Published in Published in Proceedings of the 29th European Photovoltaic Solar Energy Conference September 22, 2014Z.A. Ibrahim, A. Shkrebtii / Chkrebtii, F. Gaspari, F. Zimmer-De Iuliis, I.M. Kupchak & D.V. Korbutyak
Hydrogen (H), introduced into crystalline (c-) or amorphous (a-) silicon (Si), is important for modifying Si properties, required for solar cell (SC) photovoltaics. To establish correlation of microscopic H bonding and distribution with the macroscopic properties of Si materials, and to theoretically interpret experimental spectra (from, e.g., non-destructive infrared or optical techniques) we carried out finite temperature ab-initio molecular dynamics (AIMD) for both c-Si and a-Si:H.
Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells
Published in 2014 IEEE 40th Photovoltaic Specialist Conference June 8, 2014A.V. Sachenko, A.I. Shkrebtii, V.P. Kostylyov, M.R. Kulish & I.O. Sokolovskyi
To accurately calculate efficiencies η of experimentally produced multijunction solar cells (MJSCs) and optimize their parameters, we offer semi-analytical photoconversion formalism that incorporates radiative recombination, Shockley-Read-Hall (SRH) recombination, surface recombination at the front and back surfaces of the cells, recombination in the space charge region (SCR) and the recombination at the heterojunction boundaries. Selfconsistent balance between the MJSC temperature and efficiency was imposed by jointly solving the equations for the photocurrent, photovoltage, and heat balance. Finally, we incorporate into the formalism the effect of additional photocurrent decrease with an increase of subcell number.
View more - Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells
Temperature Induced Evolution of Bond-Centered Hydrogen (BCH) Defects in Crystalline Silicon: Dynamical, Electronic, Vibrational and Optical Signatures
Published in MRS Proceedings April 1, 2011Zahraa A. Ibrahim, Anatoli I. Shkrebtii, Frederic Zimmer-De Iuliis and Franco Gaspari
The thermal stability, evolution and structure of the bond-centered-hydrogen (BCH) defect in crystalline silicon, its temperature induced dissociation, and the new H complexes formed have been studied in the temperature range from 50 K to 650 K by first-principles molecular dynamics (MD). We demonstrate that BCH is stable at 60 K, but decays at and above 310 K in agreement with experimental results.
Correlation of Dielectric and Vibrational Properties of Amorphous Hydrogenated Si for Photovoltaic Applications: Modelling and Experiment
Published in 35th IEEE Photovoltaic Specialists Conference June 20, 2010Z.A. Ibrahim, A.I. Shkrebtii, F. Gaspari & T. Teatro
Demand on high quality amorphous hydrogenated Si (a- Si:H) for thin film solar cell or microelectronics applications necessitates microscopic and in-situ access to various processes in this fundamentally interesting material. We demonstrate that such access can be provided by combining first principles computational simulations with commonly used infrared vibrational spectroscopy and still rarely utilized optical ellipsometry in the infrared (IR) range. To achieve this goal we developed computational approaches to comprehensively track hydrogen behaviour in both ordered and disordered (non-crystalline) materials.
Theory of the Temperature Dependent Dielectric Function of Semiconductors: from Bulk to Surfaces. Application to GaAs and Si
Published in Physica Status Solidi (b) June 18, 2010Anatoli I. Shkrebtii, Zahraa A. Ibrahim, Timothy Teatro, Wolfgang Richter, Martin J.G. Lee & Laura Henderson
A novel, efficient method for calculating the temperature dependencies of the linear dielectric functions of semiconductor systems and its application are presented. The method follows an intuitive and natural path with ab-initio finite temperature molecular dynamics providing the thermally perturbed atomic configurations, which are used as structural inputs for calculating the dielectric function. The effect of lattice dynamics, including quantum zero point vibration, on the electronic bands and dielectric function of crystalline (c-) GaAs and Si as well as hydrogenated amorphous Si (a-Si:H) is discussed.
American Physical Society
Canadian Association of Physicists
Institute of Electrical and Electronics Engineers
Materials Research Society
- Electricity and Magnetism I (PHY 2010U)
This course provides the student with an introduction to the fundamental principles of classical electrodynamics. The course introduces: vectors in Cartesian, polar and cylindrical co-ordinates; scalar and vector fields; electric field, electric potential; Gauss’ law; line and surface integrals; gradient and divergence operators; Poisson’s and Laplace’s equations; dipoles, multipole expansions; capacitance; polarization, electric displacement and boundary conditions; DC circuit analysis; capacitors and RC transients; Lorentz force law; divergence and curl of the magnetic field in magnetostatics. - Electricity and Magnetism II (PHY 3080U)
PHY 3080U is a second course in electromagnetism. It continues to build a foundation in electricity and magnetism with discussions of electromotive force, electric currents and the continuity equation, motional electromotive force, electromagnetic induction and Faraday’s law, the induced electric field, and energy in magnetic fields. Electrodynamics before and after Maxwell is presented along with further discussions of conservation laws, and the continuity equation. The course introduces Poynting’s theorem, waves in one dimension, sinusoidal waves, boundary conditions, reflection and transmission and electromagnetic waves in a vacuum, and guided waves. - Statistical Mechanics I (PHY 3010U)
The course introduces students to the statistical behaviour of physical systems with large numbers of particles and degrees of freedom. This course shows how macroscopic thermodynamics can be explained by a statistical treatment of microscopic interactions, both classical and quantum. The course will introduce the dynamical basis of temperature, entropy, chemical potential and other thermodynamic quantities. Topics include: the kinetic theory of gases; statistical thermodynamics; classical and quantum statistics; Boltzmann and Maxwell-Boltzmann distributions; the classical statistical treatment of an ideal gas; the heat capacity of a diatomic gas; the heat capacity of a solid.
